TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS

被引：108
作者：
PANKOVE, JI
机构：
来源：
PHYSICAL REVIEW LETTERS | 1962年 / 9卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.9.283
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：283 / &
相关论文
共 11 条
[1]  
AIGRAIN P, PRIVATE COMMUNICATIO
[2]  
FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[3]  
KELDYSH LV, 1958, SOV PHYS JETP, V34, P665
[4]  
KELDYSH LV, 1961, 1960 P INT C SEM PHY, P824
[5]   OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].
MOSS, TS .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&
[6]  
PANKOVE JI, 1961, ANN PHYS-PARIS, V6, P331
[7]  
PANKOVE JI, 1962, B AM PHYS SOC, V7, P88
[8]  
PANKOVE JI, 1962, J ELECTROCHEM SOC, V11, P71
[9]   DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION [J].
SOMMERS, HS .
PHYSICAL REVIEW, 1961, 124 (04) :1101-&
[10]   EFFECT OF A HIGH ELECTRIC FIELD ON ABSORPTION OF LIGHT BY PBI2 AND HGI2 [J].
WILLIAMS, R .
PHYSICAL REVIEW, 1962, 126 (02) :442-&
12