THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM

被引：403

作者：

WOLFF, PA

机构：

来源：

PHYSICAL REVIEW | 1954年 / 95卷 / 06期

关键词：

D O I：

10.1103/PhysRev.95.1415

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1415 / 1420

页数：6

共 11 条

[1] HIGH FREQUENCY ELECTRICAL BREAKDOWN OF GASES [J].

ALLIS, WP ;

BROWN, SC .

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[2] ELECTRONIC STRUCTURE OF THE GERMANIUM CRYSTAL [J].

HERMAN, F ;

CALLAWAY, J .

PHYSICAL REVIEW, 1953, 89 (02) :518-519

[3] SECONDARY ELECTRON EMISSION FROM GERMANIUM [J].

JOHNSON, JB ;

MCKAY, KG .

PHYSICAL REVIEW, 1954, 93 (04) :668-672

[4]

Loeb L. B., 1939, FUNDAMENTAL PROCESSE

[5] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[6] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

MCKAY, KG ;

MCAFEE, KB .

PHYSICAL REVIEW, 1953, 91 (05) :1079-1084

[7] MOBILITIES OF ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (01) :139-140

[8]

SEITZ F, 1948, PHYS REV, V73, P550

[9] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034

[10] MOTION OF GASEOUS IONS IN STRONG ELECTRIC FIELDS [J].

WANNIER, GH .

BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (01) :170-254

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