TEMPERATURE-DEPENDENCE OF FEMTOSECOND ELECTROMAGNETIC-RADIATION FROM SEMICONDUCTOR SURFACES

被引：31

作者：

HU, BB ^{[1
]}

ZHANG, XC ^{[1
]}

AUSTON, DH ^{[1
]}

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 25期

关键词：

D O I：

10.1063/1.103829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present observation of temperature dependence of optically induced femtosecond electromagnetic radiation from several semiconductors. When the sample temperature decreases from 280 to 80 K, over 4 times and 21 times increases of the radiated peak field and radiated energy have been found. A large shift of the frequency spectrum of the radiation was observed when the InSb sample temperature was tuned over this range.

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页码：2629 / 2631

页数：3

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