ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS

被引：208
作者：
GIBBONS, JF
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 03期
关键词：
D O I：
10.1109/PROC.1968.6273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：295 / +
页数：1
相关论文
共 53 条
[1]   DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J].
ALVAGER, T ;
HANSEN, NJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) :567-&
[2]   AN EXPERIMENTAL STUDY ON ORIENTATION DEPENDENCE OF (P,GAMMA) YIELDS IN MONOCRYSTALLINE ALUMINUM [J].
ANDERSEN, JU ;
DAVIES, JA ;
NIELSEN, KO ;
ANDERSEN, SL .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :210-&
[3]   EXPERIMENTAL INVESTIGATION OF ORIENTATION DEPENDENCE OF RUTHERFORD SCATTERING YIELD IN SINGLE CRYSTALS [J].
BOGH, E ;
UGGERHOJ, E .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :216-&
[4]  
BOGH E, TO BE PUBLISHED
[5]  
BROWN W, P SANTA FE C RADIATI
[6]   EFFECTS PRODUCED BY THE IONIC BOMBARDMENT OF GERMANIUM [J].
CUSSINS, WD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (04) :213-222
[7]   RANGE OF XE133 AND AR41 IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM [J].
DAVIES, JA ;
BROWN, F ;
MCCARGO, M .
CANADIAN JOURNAL OF PHYSICS, 1963, 41 (06) :829-&
[8]   RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].
DAVIES, JA ;
BROWN, F ;
BALL, GC ;
DOMEIJ, B .
CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&
[9]   ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J].
DAVIES, JA ;
JESPERSGARD, P .
CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1631-+
[10]   A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE-ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUM [J].
DAVIES, JA ;
FRIESEN, J ;
MCINTYRE, JD .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1960, 38 (09) :1526-1534
123456