BEHAVIOR OF CONTINUOUSLY CHARGE-COUPLED RANDOM-ACCESS MEMORY (C3RAM)

被引：8

作者：

HOFFMANN, K ^{[1
]}

机构：

[1] SIEMENS AG,MUNICH,FED REP GER

来源：

关键词：

D O I：

10.1109/JSSC.1976.1050786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 596

页数：6

共 9 条

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[2] HELLER L, 1971, IBM TECHNICAL DI JUL, V14
[3] HELLER LG, 1975, ISSCC DIG TECH P FEB, P112
[4] HOFFMANN K, TO BE PUBLISHED
[5] HOFFMANN K, 1976, ISSCC DIG TECH P FEB, P130
[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
[7] STORAGE ARRAY AND SENSE-REFRESH CIRCUIT FOR SINGLE-TRANSISTOR MEMORY CELLS
STEIN, KU
SIHLING, A
DOERING, E
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 336 - &
[8] STRAIN RJ, 1971, BELL SYST TECH J, V50
[9] RESISTIVE MOS-GATED DIODE LIGHT SENSOR
WHELAN, MV
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 161 - 171