INJECTION LUMINESCENCE IN GALLIUM ARSENIDE

被引：0

作者：

PANKOVE, JI

MASSOULIE, MJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C67 / C67

页数：1

共 50 条

[1] IDENTIFICATION OF SATELLITE PEAKS IN INJECTION LUMINESCENCE FROM GALLIUM ARSENIDE TRANSISTORS
CHAPMAN, RA
HUTCHINSON, WG
SOLID-STATE ELECTRONICS, 1966, 9 (06) : 625 - +
[2] EFFECT OF ARSENIC PRESSURE ON CRYSTAL EFFICIENCY FOR INJECTION LUMINESCENCE IN GALLIUM ARSENIDE
BRICE, JC
SOLID-STATE ELECTRONICS, 1967, 10 (04) : 335 - &
[3] GALLIUM ARSENIDE INJECTION LASER RADAR
GOLDSTEIN, BS
DALRYMPLE, GF
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02): : 181 - +
[4] Formation of the centers of intense luminescence in gallium arsenide
Dzhumamukhambetov, N.G.
Dzhumamukhambetov, Zh.G.
Fizika i Khimiya Obrabotki Materialov, 2000, (02): : 27 - 29
[5] LUMINESCENCE OF TUNGSTEN IMPURITIES IN GALLIUM-ARSENIDE
USHAKOV, VV
GIPPIUS, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 881 - 884
[6] EFFICIENCY OF LUMINESCENCE IN COMPENSATED GALLIUM-ARSENIDE
KOROLEV, VL
ROSSIN, VV
SIDOROV, VG
SHALABUTOV, YK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (05): : 575 - 576
[7] LUMINESCENCE MEASUREMENT OF DOPING LEVELS IN GALLIUM ARSENIDE
TUCK, B
NON-DESTRUCTIVE TESTING, 1968, 1 (06): : 401 - &
[8] LUMINESCENCE OF SOLID-SOLUTIONS OF ALUMINUM ARSENIDE-GALLIUM ARSENIDE
ALFEROV, ZI
GARBUZOV, DZ
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1973, 37 (03): : 651 - 658
[9] INJECTION LUMINESCENCE IN SOLUTION GROWN P-TYPE GE-DOPED GALLIUM ARSENIDE
CONSTANTINESCU, C
POPOVICI, G
REVUE ROUMAINE DE PHYSIQUE, 1969, 14 (04): : 345 - +
[10] INJECTION CURRENTS IN A GALLIUM-ARSENIDE TRICRYSTAL
VAKULENKO, OV
DRANENKO, AS
NOVIKOV, NN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 750 - 752

← 1 2 3 4 5 →