INFLUENCE OF DIELECTRIC CHARGE ON HOLE FIELD-EFFECT MOBILITY IN SILICON INVERSION LAYERS

被引:4
|
作者
OAKLEY, RE
PEPPER, M
机构
关键词
D O I
10.1016/0375-9601(72)90646-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:87 / &
相关论文
共 50 条
  • [1] Hole mobility in silicon inversion layers: Stress and surface orientation
    Sun, Guangyu
    Sun, Yongke
    Nishida, Toshikazu
    Thompson, Scott E.
    Journal of Applied Physics, 2007, 102 (08):
  • [2] Hole mobility in silicon inversion layers: Stress and surface orientation
    Sun, Guangyu
    Sun, Yongke
    Nishida, Toshikazu
    Thompson, Scott E.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
  • [3] High mobility of pentacene field-effect transistors with polyimide gate dielectric layers
    Kato, Y
    Iba, S
    Teramoto, R
    Sekitani, T
    Someya, T
    Kawaguchi, H
    Sakurai, T
    APPLIED PHYSICS LETTERS, 2004, 84 (19) : 3789 - 3791
  • [4] Quantum kinetics approach to calculation of the low field mobility in the hole inversion layers of silicon MOSFET's
    Kovalenko, K. L.
    Kozlovskiy, S. I.
    Sharan, N. N.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (03) : 926 - 933
  • [5] Quantum kinetics approach to calculation of the low field mobility in the hole inversion layers of silicon MOSFET’s
    K. L. Kovalenko
    S. I. Kozlovskiy
    N. N. Sharan
    Journal of Computational Electronics, 2018, 17 : 926 - 933
  • [6] HOLE MOBILITY IN INVERSION-LAYERS OF MOS STRUCTURES WITH SUPERTHIN GATE DIELECTRIC
    GUZEV, AA
    GURTOV, VA
    RZHANOV, AV
    FRANTSUZOV, AA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 61 - 73
  • [7] Formation of inversion layers in organic field-effect transistors
    Brondijk, J. J.
    Spijkman, M.
    van Seijen, F.
    Blom, P. W. M.
    de Leeuw, D. M.
    PHYSICAL REVIEW B, 2012, 85 (16)
  • [8] Physical modeling of hole mobility in silicon inversion layers under uniaxial stress
    Ji Zhao
    Yaohua Tan
    Jianping Zou
    Zhiping Yu
    Journal of Computational Electronics, 2007, 6 : 63 - 65
  • [9] Physical modeling of hole mobility in silicon inversion layers under uniaxial stress
    Zhao, Ji
    Tan, Yaohua
    Zou, Jianping
    Yu, Zhiping
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2007, 6 (1-3) : 63 - 65
  • [10] High field hole velocity and velocity overshoot in silicon inversion layers
    Univ of California, Berkeley, United States
    IEEE Electron Device Lett, 2 (54-56):