FORMATION OF CONDUCTIVE LAYER NEAR-SURFACE OF SEMI-INSULTING GAAS COVERED WITH OXIDE FILM

被引：19

作者：

SATO, Y ^{[1
]}

机构：

[1] NIPPON TELEGR & TEL PUBL CORP,MUSASHINO ELECTR COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 02期

关键词：

D O I：

10.1143/JJAP.12.242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：242 / 251

页数：10

共 14 条

[1] DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J].

ANTELL, GR .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :943-&

[2]

CRONIN GR, 1963, J ELECTROCHEM SOC, V110, pC265

[3] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

DRANGEID, KE ;

SOMMERHALDER, R ;

WALTER, W .

ELECTRONICS LETTERS, 1970, 6 (08) :228-+

[4]

FUJIMOTO M, 1969, 1 P C SOL STAT DEV T, P139

[5] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES [J].

FURUKAWA, Y ;

ISHIBASHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :503-+

[6] DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM [J].

SAH, CT ;

SELLO, H ;

TREMERE, DA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :288-298

[7] PROPERTIES OF INTERFACE BETWEEN GALLIUM ARSENIDE AND SILICON OXIDES [J].

SATO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (06) :595-&

[8]

SEKI H, 1971, ECL TECH J, V20, P1829

[9]

SELWAY PR, 1968, BRIT J APPL PHYS, V1, P25

[10]

STATZ HF, 1971, Patent No. 462705

← 1 2 →