NO2 SENSITIVE GA-DOPED ZNO THIN-FILM

被引：31

作者：

MATSUSHIMA, S

IKEDA, D

KOBAYASHI, K

OKADA, G

机构：

来源：

CHEMISTRY LETTERS | 1992年 / 02期

关键词：

D O I：

10.1246/cl.1992.323

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The resistivity of a Ga-doped ZnO film in a NO2 atmosphere remarkably increases with decreasing the thickness of the film while that in air remains unchanged. A Ga-doped ZnO film with 75 nm in thickness shows high sensitivity and rapid response to NO2 at 400-degrees-C.

引用

页码：323 / 326

页数：4

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