NO2 SENSITIVE GA-DOPED ZNO THIN-FILM

被引：31
|
作者：
MATSUSHIMA, S
IKEDA, D
KOBAYASHI, K
OKADA, G
机构：
来源：
CHEMISTRY LETTERS | 1992年 / 02期
关键词：
D O I：
10.1246/cl.1992.323
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The resistivity of a Ga-doped ZnO film in a NO2 atmosphere remarkably increases with decreasing the thickness of the film while that in air remains unchanged. A Ga-doped ZnO film with 75 nm in thickness shows high sensitivity and rapid response to NO2 at 400-degrees-C.
引用
收藏
页码：323 / 326
页数：4
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