MOLECULAR-DYNAMICS SIMULATIONS OF THE STABILITY OF AMORPHOUS-SILICON

被引:12
|
作者
KWON, I [1 ]
BISWAS, R [1 ]
SOUKOULIS, CM [1 ]
机构
[1] IOWA STATE UNIV SCI & TECHNOL,US DOE,AMES LAB,AMES,IA 50011
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 02期
关键词
D O I
10.1103/PhysRevB.43.1859
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed molecular-dynamics simulations as a first step towards understanding the Staebler-Wronski effect in amorphous silicon, utilizing classical silicon potentials and computer-generated amorphous silicon structures. A localized hot spot is used to model the nonradiative transfer of photoexcited carrier energy to the lattice. This leads to structural degradation in a-Si networks in which weak Si-Si bonds are broken and dangling bonds are produced, requiring a threshold energy of about 0.8-1.0 eV. Thermal annealing of an a-Si model with coordination defects is also described.
引用
收藏
页码:1859 / 1862
页数:4
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