HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY

被引：63
作者：
CAMPBELL, JC
TSANG, WT
QUA, GJ
JOHNSON, BC
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 03期
关键词：
D O I：
10.1109/3.151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：496 / 500
页数：5
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