ELECTRON TRAPPING NOISE IN SOS MOS FIELD-EFFECT TRANSISTORS OPERATED IN LINEAR REGION

[1] ON THE INFLUENCE OF DIFFUSION AND SURFACE RECOMBINATION UPON THE GR NOISE SPECTRUM OF SEMICONDUCTORS [J]. PHYSICA, 1960, 26 (09): : 751 - 760

[2] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[3] HSU ST, 1975, RCA REV, V36, P240

[4] HSU ST, 1970, IEEE T ELECTRON DEV, VED17, P496, DOI 10.1109/T-ED.1970.17021

[5] HSU ST, 1977, RCA REV, V38, P139

[6] HSU ST, 1972, NOISE S U FLORIDA GA

[7] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 1 - &

[8] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 41 - +

[9] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 795 - +

[10] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &

[1] ON THE INFLUENCE OF DIFFUSION AND SURFACE RECOMBINATION UPON THE GR NOISE SPECTRUM OF SEMICONDUCTORS [J]. PHYSICA, 1960, 26 (09): : 751 - 760

[2] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[3] HSU ST, 1975, RCA REV, V36, P240

[4] HSU ST, 1970, IEEE T ELECTRON DEV, VED17, P496, DOI 10.1109/T-ED.1970.17021

[5] HSU ST, 1977, RCA REV, V38, P139

[6] HSU ST, 1972, NOISE S U FLORIDA GA

[7] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 1 - &

[8] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 41 - +

[9] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 795 - +

[10] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &