ROOM-TEMPERATURE OPERATION OF GA(1-X)A1XAS-GAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALLORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

DUPUIS, RD ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期

关键词：

D O I：

10.1109/T-ED.1977.18921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1195 / 1196

页数：2

共 50 条

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