A COMPARATIVE-STUDY OF THE DIFFUSION BARRIER PROPERTIES OF TIN AND ZRN

被引:90
作者
OSTLING, M
NYGREN, S
PETERSSON, CS
NORSTROM, H
BUCHTA, R
BLOM, HO
BERG, S
机构
[1] UNIV UPPSALA,INST TECHNOL,S-75121 UPPSALA,SWEDEN
[2] INST MICROWAVE TECHNOL,S-10044 STOCKHOLM,SWEDEN
关键词
D O I
10.1016/0040-6090(86)90254-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
13
引用
收藏
页码:81 / 88
页数:8
相关论文
共 13 条
[1]  
[Anonymous], PHYS SEMICONDUCTOR D
[2]   ZRN DIFFUSION BARRIER IN ALUMINUM METALLIZATION SCHEMES [J].
KRUSINELBAUM, L ;
WITTMER, M ;
TING, CY ;
CUOMO, JJ .
THIN SOLID FILMS, 1983, 104 (1-2) :81-87
[3]   DIFFUSION BARRIERS IN THIN-FILMS [J].
NICOLET, MA .
THIN SOLID FILMS, 1978, 52 (03) :415-443
[4]   LIMITATION OF TI/TIN DIFFUSION BARRIER LAYERS IN SILICON TECHNOLOGY [J].
NORSTROM, H ;
NYGREN, S ;
WIKLUND, P ;
OSTLING, M ;
BUCHTA, R ;
PETERSSON, CS .
VACUUM, 1985, 35 (12) :547-553
[5]   TISI2/TIN - A STABLE MULTILAYERED CONTACT STRUCTURE FOR SHALLOW IMPLANTED JUNCTIONS IN VLSI TECHNOLOGY [J].
NORSTROM, H ;
DONCHEV, T ;
OSTLING, M ;
PETERSSON, CS .
PHYSICA SCRIPTA, 1983, 28 (06) :633-636
[6]   REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT [J].
NORSTROM, H ;
RUNOVC, F ;
BUCHTA, R ;
WIKLUND, P ;
OSTLING, M ;
PETERSSON, CS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :463-464
[7]   ARSENIC DISTRIBUTION IN BILAYERS OF TISI2 ON POLYCRYSTALLINE SILICON DURING HEAT-TREATMENT [J].
OSTLING, M ;
PETERSSON, CS ;
CHATFIELD, C ;
NORSTROM, H ;
RUNOVC, F ;
BUCHTA, R ;
WIKLUND, P .
THIN SOLID FILMS, 1983, 110 (04) :281-289
[8]  
OSTLING M, 1983, EUROPHYSICS C F, V7, P204
[9]  
OSTLING M, 1982, EUROPHYSICS C, V6, P82
[10]  
OSTLING S, 1984, J VAC SCI TECHNOL A, V2, P281