INTERPRETATION OF FLAT-BAND VOLTAGE SHIFTS IN TERMS OF CHARGE-DISTRIBUTIONS IN MNOS STRUCTURES

被引:4
作者
BERNT, H [1 ]
SCHOLTENS, JW [1 ]
机构
[1] SIEMENS AG,D-8000 MUNICH 80,FED REP GER
关键词
D O I
10.1016/0038-1101(82)90171-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:843 / 850
页数:8
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共 12 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]  
GOODMAN AM, 1970, RCA REV, V31, P342
[3]   DISCHARGE OF MNOS STRUCTURES [J].
LUNDKVIST, L ;
LUNDSTROM, I ;
SVENSSON, C .
SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+
[4]   DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES [J].
LUNDKVIST, L ;
SVENSSON, C ;
HANSSON, B .
SOLID-STATE ELECTRONICS, 1976, 19 (03) :221-227
[5]   SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].
MAES, H ;
VANOVERSTRAETEN, RJ .
APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284
[6]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
[7]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[8]   CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J].
STEIN, HJ ;
WEGENER, HAR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :908-912
[9]   HYDROGEN CONTENT AND ANNEALING OF MEMORY QUALITY SILICON-OXYNITRIDE FILMS [J].
STEIN, HJ .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) :161-177
[10]   EFFECTS OF HIGH-TEMPERATURE ANNEALING ON MNOS DEVICES [J].
TOPICH, JA ;
YON, ET .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :535-539