THE EFFECTS OF ION SPECIES AND TARGET TEMPERATURE ON TOPOGRAPHY DEVELOPMENT ON ION-BOMBARDED SI

被引:43
作者
CARTER, G [1 ]
VISHNYAKOV, V [1 ]
MARTYNENKO, YV [1 ]
NOBES, MJ [1 ]
机构
[1] RUSSIAN RES CTR,KURCHATOV INST,MOSCOW 123182,RUSSIA
关键词
D O I
10.1063/1.359931
中图分类号
O59 [应用物理学];
学科分类号
摘要
The production of periodic ripple or wavelike structure by Si+, Ne+, Ar+ and Xe+ high-fluence ion bombardment at 20 and 30 keV of Si at 45 degrees incidence angle and at target temperatures from 120 K to room temperature and observed by scanning electron and atomic force microscopy is described. Different species exhibit different behaviors at different temperatures with Xe+ producing transverse wave structures at room temperature and below, Ar+ producing more patchy ripple structures, and Ne+ and Si+ only producing wave structures at low temperatures. Possible reasons for the different behavior include implant ion incorporation which mediates flow and stress relief in the amorphized near-surface layer. (C) 1995 American Institute of Physics.
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页码:3559 / 3565
页数:7
相关论文
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