FABRICATION TECHNIQUE FOR SI SINGLE-ELECTRON TRANSISTOR OPERATING AT ROOM-TEMPERATURE

被引：298

作者：

TAKAHASHI, Y

NAGASE, M

NAMATSU, H

KURIHARA, K

IWDATE, K

NAKAJIMA, K

HORIGUCHI, S

MURASE, K

TABE, M

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagaiva 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 02期

关键词：

TRANSISTORS; SIMOX;

D O I：

10.1049/el:19950082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to similar to 2aF, which enabled conductance oscillation of the SET at room temperature.

引用

页码：136 / 137

页数：2

共 4 条

[1] COULOMB-BLOCKADE IN A SILICON TUNNEL JUNCTION DEVICE [J].