SUBSTRATE MISORIENTATION EFFECTS IN ALGAINP LASERS AND CRYSTALS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：6

作者：

KIKUCHI, A

KISHINO, K

机构：

[1] Kishino Laboratory, Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku, Tokyo, 102, 7-1, Kioi-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0022-0248(93)90567-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Lasing performance of GaInP/AlInP lasers grown on misoriented GaAs substrates by gas source molecular beam epitaxy (GS-MBE) strongly depended on the substrate misorientation angle (SMA). In this paper, dependences of photoluminescence (PL) properties and carrier concentration of (AlxGa1-x)0.5In0.5P Crystals grown by GS-MBE, on SMA were systematically investigated. It turned out, through the PL measurements, that the Al-related non-radiative recombination in (AlxGa1-x)0.5In0.5P layers was reduced with increasing of SMA. On the other hand, the electrical activity of Be in p-type Al0.5In0.5P layers was enhanced together with increased SMA. These substrate misorientation effects in GS-MBE grown AlGaInP are discussed in connection with the improved lasing characteristics.

引用

页码：9 / 13

页数：5

共 16 条

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