BROAD-BAND SMALL-SIGNAL IMPEDANCE CHARACTERIZATION OF SILICON (SI) P+-N-N+ IMPATT DIODES

被引：10

作者：

OHTOMO, M ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1974年 / MT22卷 / 07期

关键词：

D O I：

10.1109/TMTT.1974.1128317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 718

页数：10

共 50 条

[31] SMALL-SIGNAL ADMITTANCE OF NONOSCILLATING BULK N-GAAS DIODES
TSUKADA, T
HAMASAKI, J
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (03): : 90 - &
[32] ON VARIATION OF SMALL-SIGNAL ALPHAS OF A P-N-P-N DEVICE WITH CURRENT
YANG, ES
VOULGARIS, NC
SOLID-STATE ELECTRONICS, 1967, 10 (07) : 641 - +
[33] THEORY OF SMALL-SIGNAL IMPEDANCE OF A P-N-N STRUCTURE WITH AN EXCEPTIONALLY LONG BASE AT A HIGH INJECTION LEVEL
ARONOV, DA
KOTOV, YP
KOTOV, EP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1444 - &
[34] P-N-P-N INTERFACE-TO-INTERFACE SWITCHING FOR TELEPHONY AND BROAD-BAND COMMUNICATION
AAGAARD, EA
COENDERS, JW
DIJKMANS, EC
IEEE TRANSACTIONS ON COMMUNICATIONS, 1974, CO22 (09) : 1250 - 1263
[35] TEMPERATURE-DEPENDENCE OF STORAGE TIME IN SILICON P+-N-N+ SWITCHING DIODES AND REDUCTION OF HARMONIC DISTORTION
ROSEN, A
MARTINELLI, RU
CAULTON, M
ELECTRONICS LETTERS, 1980, 16 (02) : 66 - 68
[36] Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+-n-n+ diodes
Cindro, V
Kramberger, G
Mikuz, M
Zontar, D
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 419 (01) : 132 - 136
[37] SMALL-SIGNAL PROPERTIES AND SENSITIVITY OF AN ACTIVE BROAD-BAND RECEIVING ANTENNA WITH A WIDE-RANGE LINEARITY
LINDENMEIER, H
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1977, 30 (01): : 95 - 99
[38] Small-signal admittance of forward-biased a-Si:H p+-i-n+ diodes by time domain analysis
Lemmi, F
Johnson, NM
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 383 - 388
[39] THE EFFECTS OF STORAGE TIME VARIATIONS ON THE FORWARD RESISTANCE OF SILICON P+-N-N+ DIODES AT MICROWAVE-FREQUENCIES
MARTINELLI, RU
ROSEN, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1728 - 1732
[40] BROAD-BAND AND HIGHER-POWER SUPERCONDUCTING QUANTUM MAGNETOMETER FOR SMALL-SIGNAL A-D CONVERTER
TAKAYANAGI, H
MASUMI, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1117 - 1120

← 1 2 3 4 5 →