COMPOSITION AND THERMAL-STABILITY OF THIN NATIVE OXIDES ON INP

被引:71
作者
WAGER, JF
ELLSWORTH, DL
GOODNICK, SM
WILMSEN, CW
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571049
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:513 / 518
页数:6
相关论文
共 19 条
[1]   COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].
BAYLISS, CR ;
KIRK, DL .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&
[2]   XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].
BERTRAND, PA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33
[3]   PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP [J].
CHYE, PW ;
SU, CY ;
LINDAU, I ;
GARNER, CM ;
PIANETTA, P ;
SPICER, WE .
SURFACE SCIENCE, 1979, 88 (2-3) :439-460
[4]   AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].
CLARK, DT ;
FOK, T ;
ROBERTS, GG ;
SYKES, RW .
THIN SOLID FILMS, 1980, 70 (02) :261-283
[5]  
CORBRIDGE DEC, 1978, PHOSPHORUS OUTLINE I
[6]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52
[7]   INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN [J].
KAWAKAMI, T ;
OKAMURA, M .
ELECTRONICS LETTERS, 1979, 15 (16) :502-504
[8]   COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS [J].
KAZMERSKI, LL ;
IRELAND, PJ ;
SHELDON, P ;
CHU, TL ;
CHU, SS ;
LIN, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1061-1066
[9]   CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].
LANGAN, JD ;
VISWANATHAN, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477
[10]   ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP [J].
MEINERS, LG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :373-379