MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE

被引：27
作者：
AWANO, Y [1 ]
TOMIZAWA, K [1 ]
HASHIZUME, N [1 ]
KAWASHIMA, M [1 ]
机构：
[1] ELECTROTECH LAB, NIIHARI, IBARAKI, JAPAN
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 03期
关键词：
D O I：
10.1049/el:19820089
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：133 / 135
页数：3
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[1]   ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES [J].
BARKER, JR ;
FERRY, DK ;
GRUBIN, HL .
ELECTRON DEVICE LETTERS, 1980, 1 (10) :209-210
[2]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[3]   BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].
HESS, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :937-940
[4]   IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J].
ROSENBERG, JJ ;
YOFFA, EJ ;
NATHAN, MI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944
[5]   NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].
SHUR, MS ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1981, 24 (01) :11-18
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