MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE

被引：27

作者：

AWANO, Y ^{[1
]}

TOMIZAWA, K ^{[1
]}

HASHIZUME, N ^{[1
]}

KAWASHIMA, M ^{[1
]}

机构：

[1] ELECTROTECH LAB, NIIHARI, IBARAKI, JAPAN

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 03期

关键词：

D O I：

10.1049/el:19820089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：133 / 135

页数：3

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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
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[4] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES
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