PHOTO-LUMINESCENCE STUDY OF PERTURBED GROWTH OF INP ON QUATERNARY LAYERS IN INGAASP-INP DOUBLE HETEROSTRUCTURES

被引：6
作者：
RAO, EVK
QUILLEC, M
BENCHIMOL, JL
THIBIERGE, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期
关键词：
D O I：
10.1063/1.91834
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：228 / 231
页数：4
相关论文
共 50 条
[41]   500-HOUR CW OPERATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS FABRICATED ON (100)-INP SUBSTRATES [J].
YAMAMOTO, T ;
SAKAI, K ;
AKIBA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1699-1700
[42]   TEMPERATURE CHARACTERISTICS OF THRESHOLD CURRENT IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].
YANO, M ;
NISHI, H ;
TAKUSAGAWA, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4022-4028
[43]   GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :44-49
[44]   LATTICE DEFECT STRUCTURE OF DEGRADED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS [J].
ISHIDA, K ;
KAMEJIMA, T ;
MATSUMOTO, Y ;
ENDO, K .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :16-17
[45]   ULTRATHIN LAYERS IN INGAASP-INP SYSTEM OBTAINED THROUGH LIQUID-PHASE EPITAXY [J].
GRUZDOV, VG ;
KOSOGOV, AO ;
FALEEV, NN .
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 20 (14) :1-7
[46]   Study of thermal characteristics of 808 nm InGaAsP-InP SQW lasers [J].
State Key Lab. on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China ;
不详 .
Guangzi Xuebao, 2006, 1 (9-12)
[47]   LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions [J].
Vasil'ev, M. G. ;
Vasil'ev, A. M. ;
Vilk, D. M. ;
Shelyakin, A. A. .
INORGANIC MATERIALS, 2007, 43 (07) :683-688
[48]   LPE growth of InP/InGaAsP/InP heterostructures and separate preparation of high-temperature solutions [J].
M. G. Vasil’ev ;
A. M. Vasil’ev ;
D. M. Vilk ;
A. A. Shelyakin .
Inorganic Materials, 2007, 43 :683-688
[49]   THE APPLICATION OF X-RAY-DIFFRACTION MEASUREMENTS IN THE GROWTH OF LPE INGAASP-INP [J].
TASHIMA, MM ;
COOK, LW ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :132-137
[50]   INFLUENCE OF RECOMBINATION IN EMITTERS ON THE PHOTO-LUMINESCENCE CHARACTERISTICS OF DOUBLE IN0.5GA0.5P-INGAASP HETEROSTRUCTURES [J].
TULASHVILI, EV ;
VAVILOVA, LS ;
GARBUZOV, DZ ;
ARSENTEV, IN ;
KHALFIN, VB .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09) :1031-1034
12345