PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF ELECTRONIC-STRUCTURE IN PSEUDOMORPHIC N-ALGAAS/INGAAS/GAAS

被引：1
作者：
KANATA, T
NAKAYAMA, H
NISHINO, T
SAKAGUCHI, H
机构：
[1] HITACHI CABLE LTD,CTR ADV RES,HITACHI,IBARAKI 31914,JAPAN
[2] KOBE UNIV,FAC ENGN,DEPT ELECT ENGN,KOBE 657,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期
关键词：
PSEUDOMORPHIC HETEROSTRUCTURE; PHOTOLUMINESCENCE; PHOTOREFLECTANCE; QUANTUM CONFINED FRANZ-KELDYSH EFFECT; FRANZ-KELDYSH OSCILLATION;
D O I：
10.1143/JJAP.31.L756
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic structure of n-Al0.28Ga0.72As/In0.23Ga0.77As/GaAs has been investigated by photoluminescence (PL) and photoreflectance (PR) spectroscopies. Transitions associated with the n = 1 and 2 electron subbands in the In0.23Ga0.77As single quantum well were observed. Two-dimensional carrier density was evaluated in terms of the quantum confined Franz-Keldysh (FK) effect of the transition between the lowest states of electrons and heavy holes. Because of penetrations of the confined electron density into the neighboring layers, PR spectra of GaAs show FK oscillation.
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收藏
页码：L756 / L758
页数：3
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