LOW-TEMPERATURE MOCVD OF HG1-XCDXTE ON 311, 511, 711 AND SHAPED GAAS

被引：14
作者：
PAIN, GN
SANDFORD, C
SMITH, GKG
STEVENSON, AW
GAO, D
WIELUNSKI, LS
RUSSO, SP
REEVES, GK
ELLIMAN, R
机构：
[1] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA
[2] CSIRO,DIV APPL PHYS,MENAI,NSW 2234,AUSTRALIA
[3] ROYAL MELBOURNE INST TECHNOL,CTR MAT & MICROELECTR TECHNOL,MELBOURNE 3000,AUSTRALIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90529-E
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of six new GaAs substrate orientations on the surface morphology and defect hillocks of epitaxial Hg(1-x)Cd(x)Te (MCT) layers, grown by low temperature MOCVD, is investigated using Nomarski interference contrast microscopy and SEM. Smoother epitaxial layers are obtained on (311), (511) and (711) substrates of A or B polarity compared with growth on (100) or (100) 2-degrees off toward (110) substrates. The quality and orientation of the layers was monitored by X-ray techniques, Rutherford backscattering/channeling and selected area electron channeling patterns. Absolute polarity determination by X-ray diffraction confirmed that the epilayers adopted the polarity of the substrate. Conformal growth on contoured substrates revealed preferential facet formation and growth rate variation which leads to local composition changes in the interdiffused multilayer process. The growth hillocks commonly observed in epitaxy of MCT are related to the oval defects in III-V compounds, and dissolve on annealing.
引用
收藏
页码：610 / 620
页数：11
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