NITROGEN TRAP IN THE SEMICONDUCTOR ALLOYS GAAS1-XPX AND ALXGA1-XAS

被引：68

作者：

WOLFORD, DJ

HSU, WY

DOW, JD

STREETMAN, BG

机构：

[1] University of Illinois at Urbana-Champaign, Urbana

来源：

JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期

关键词：

D O I：

10.1016/0022-2313(79)90252-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photoluminescence and optical absorption spectra of excitons bound to the nitrogen isoelectronic trap in GaAs1-χxPχx and in AlχxGa1-χxAs As are explained by treating nitrogen as a deep exciton trap with exciton-phonon coupling which depends sensitively upon band structure. © 1979.

引用

页码：863 / 867

页数：5

共 5 条

[1] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].

HSU, WY ;

DOW, JD ;

WOLFORD, DJ ;

STREETMAN, BG .

PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615

[2] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J].

HUANG, K ;

RHYS, A .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078) :406-423

[3]

WOLFORD DJ, 1978, B AM PHYS SOC, V23, P213

[4]

WOLFORD DJ, 1978, B AM PHYS SOC, V23, P201

[5]

WOLFORD DJ, UNPUBLISHED

← 1 →