ALKALI-DEVELOPABLE SILICONE-BASED NEGATIVE PHOTORESIST (SNP) FOR DEEP UV, ELECTRON-BEAM, AND X-RAY LITHOGRAPHIES

被引：5

作者：

BAN, H

TANAKA, A

KAWAI, Y

DEGUCHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1863 / L1865

页数：3

共 11 条

[1] Asakawa H., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P88
[2] ALKALI-DEVELOPABLE SILICONE-BASED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY
BAN, H
TANAKA, A
IMAMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2137 - L2138
[3] BAN H, IN PRESS POLYMER
[4] EFFECTS OF PHOTOELECTRONS EJECTED FROM THE SUBSTRATE ON PATTERNING CHARACTERISTICS IN X-RAY-LITHOGRAPHY
DEGUCHI, K
NAMATSU, H
KOMATSU, K
YOSHIKAWA, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 551 - 554
[5] KAWAI Y, IN PRESS P SPIE ADV, V6
[6] HIGH-RESOLUTION DOUBLE-LAYER RESIST SYSTEM USING NEW SILICONE BASED NEGATIVE RESIST (SNR)
MORITA, M
TANAKA, A
IMAMURA, S
TAMAMURA, T
KOGURE, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L659 - L660
[7] A SILICON CONTAINING POSITIVE PHOTORESIST (SIPR) FOR A BILAYER RESIST SYSTEM
SAOTOME, Y
GOKAN, H
SAIGO, K
SUZUKI, M
OHNISHI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 909 - 913
[8] Sugiyama H., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V920, P268, DOI 10.1117/12.968328
[9] NEW PHOTORESIST FOR HIGH-RESOLUTION 2-LAYER RESIST SYSTEMS
TANAKA, A
MORITA, M
ONOSE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02): : L112 - L114
[10] ALKALI-DEVELOPABLE SILICON CONTAINING POSITIVE PHOTORESIST (ASTRO) FOR A 2-LAYER RESIST SYSTEM - PREPARATION AND PROCESSING
TORIUMI, M
SHIRAISHI, H
UENO, T
HAYASHI, N
NONOGAKI, S
SATO, F
KADOTA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 936 - 939

← 1 2 →