STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL SI ON INSULATING SUBSTRATES

被引：6

作者：

ROZGONYI, GA

RADZIMSKI, ZJ

HIGUCHI, T

JIANG, BL

LEE, DM

ZHOU, T

SCHMIDT, D

BLAKE, J

机构：

[1] WESTINGHOUSE ELECT CORP,PITTSBURGH,PA 15235

[2] EATON CORP,DIV THIN FILM,DANVERS,MA 01923

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.101841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：586 / 588

页数：3

共 10 条

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[7]

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[8] DETERMINATION OF MINORITY-CARRIER GENERATION LIFETIME IN BEAM-RECRYSTALLIZED SILICON-ON-INSULATOR STRUCTURE BY USING A DEPLETION-MODE TRANSISTOR [J].

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[10]

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