ORGANOMETALLIC VPE GROWTH OF A1XGA1-XAS

被引:34
作者
STRINGFELLOW, GB
HALL, HT
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D O I
10.1007/BF02655624
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:201 / 226
页数:26
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共 28 条
[1]  
BLAKESLEE AE, 1971, SPR M CLEV
[2]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[3]   PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :435-442
[4]   ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468
[5]   HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD ;
YINGLING, RD ;
MOUDY, LA .
APPLIED PHYSICS LETTERS, 1977, 31 (03) :201-203
[6]   CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :406-407
[7]   GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841
[8]   VAPOR GROWTH AND PROPERTIES OF AIAS [J].
ETTENBERG, M ;
SIGAI, AG ;
DREEBEN, A ;
GILBERT, SL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1355-+
[9]  
GARDNER M, UNPUBLISHED
[10]  
HALLAIS J, UNPUBLISHED