SURFACE METALLIZATION OF SILICON BY POTASSIUM ADSORPTION ON SI(001)-(2X1)

被引:78
作者
CIRACI, S [1 ]
BATRA, IP [1 ]
机构
[1] IBM CORP, ALMADEN RES CTR, SAN JOSE, CA 95120 USA
关键词
D O I
10.1103/PhysRevB.37.2955
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2955 / 2967
页数:13
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[1]  
ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6
[2]   MONOLAYER K-FILMS ON NI(100) .2. ELECTRONIC EXCITATIONS [J].
ANDERSSON, S ;
JOSTELL, U .
SOLID STATE COMMUNICATIONS, 1973, 13 (07) :833-836
[3]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[4]   MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1 [J].
ARUGA, T ;
TOCHIHARA, H ;
MURATA, Y .
PHYSICAL REVIEW LETTERS, 1984, 53 (04) :372-375
[5]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[6]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[7]   IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1984, 29 (12) :6419-6424
[8]   A THEORETICAL-STUDY OF THE EPITAXIAL-GROWTH OF METAL OVERLAYERS ON SEMICONDUCTOR SURFACES [J].
BATRA, IP ;
CIRACI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :427-432
[9]   ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
BATRA, IP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :558-563
[10]   METALLIZATION AND SCHOTTKY-BARRIER FORMATION [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1986, 33 (06) :4312-4314