SATURATION CHARACTERISTICS OF TUNNEL-DIODE AMPLIFIERS

被引:0
作者
PENNEY, JD
机构
来源
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1968年 / 115卷 / 04期
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D O I
10.1049/piee.1968.0089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:486 / +
页数:1
相关论文
共 3 条
[1]   SHORT-HOP RADIO-RELAY SYSTEMS USING TUNNEL-DIODE REPEATERS [J].
HEDDERLY, DL ;
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PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1967, 114 (04) :435-&
[2]   MEASUREMENT OF SPOT NOISE OF GERMANIUM GALLIUM ANTIMONIDE GALLIUM ARSENIDE + SILICON ESAKI DIODES [J].
KING, BG ;
SHARPE, GE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (06) :273-+
[3]  
MCPHUN MK, 1966, 6 INT C MICR OPT GEN