ABINITIO LINEAR COMBINATION OF PSEUDO-ATOMIC-ORBITAL SCHEME FOR THE ELECTRONIC-PROPERTIES OF SEMICONDUCTORS - RESULTS FOR 10 MATERIALS

被引:112
作者
JANSEN, RW
SANKEY, OF
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 12期
关键词
D O I
10.1103/PhysRevB.36.6520
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:6520 / 6531
页数:12
相关论文
共 46 条
[1]   ABINITIO PSEUDOPOTENTIAL DESCRIPTION OF COHESION IN NACL [J].
ANDREONI, W ;
MASCHKE, K ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (04) :2314-2316
[2]  
[Anonymous], ELECTRONIC STRUCTURE
[3]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[4]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[5]   OPTICAL STUDIES OF VIBRATIONAL PROPERTIES OF DISORDERED SOLIDS [J].
BARKER, AS ;
SIEVERS, AJ .
REVIEWS OF MODERN PHYSICS, 1975, 47 :S1-S179
[6]   BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132
[7]   ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852
[8]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[9]   SCALING OF THE HAMILTONIAN AND MOMENTUM IN SEMICONDUCTORS [J].
BREY, L ;
TEJEDOR, C ;
VERGES, JA .
PHYSICAL REVIEW B, 1984, 29 (12) :6840-6845
[10]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817