OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING CHEMICAL BEAM EPITAXY

被引：84

作者：

TSANG, WT ^{[1
]}

CHIU, TH ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

ROBERTSON, A ^{[1
]}

机构：

[1] AT&T ENGN,RES CTR,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期

关键词：

D O I：

10.1063/1.97861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1376 / 1378

页数：3

共 50 条

[1] OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP
MORISHITA, Y
MARUNO, S
GOTODA, M
NOMURA, Y
OGATA, H
APPLIED PHYSICS LETTERS, 1988, 53 (01) : 42 - 44
[2] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY ON ROTATING SUBSTRATES
VANDERWAGT, JPA
HARRIS, JS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1236 - 1238
[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING THE GROWTH OF GAAS BY CHEMICAL-BEAM EPITAXY
CHIU, TH
TSANG, WT
CUNNINGHAM, JE
ROBERTSON, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 642 - 643
[4] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING DISILANE GAS SOURCE MOLECULAR-BEAM EPITAXY
HIROI, M
KOYAMA, K
TATSUMI, T
HIRAYAMA, H
APPLIED PHYSICS LETTERS, 1992, 60 (14) : 1723 - 1725
[5] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY OF NI ON W(110)
KOZIOL, C
LILIENKAMP, G
BAUER, E
APPLIED PHYSICS LETTERS, 1987, 51 (12) : 901 - 903
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A
FAHY, MR
SATO, K
JOYCE, BA
APPLIED PHYSICS LETTERS, 1994, 64 (02) : 190 - 192
[7] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[8] MECHANISM OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY ON A SI(001) SURFACE
MITSUISHI, K
HASHIMOTO, I
SAKAMOTO, K
SAKAMOTO, T
WATANABE, K
PHYSICAL REVIEW B, 1995, 52 (15): : 10748 - 10751
[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS(110) FILMS
NEAVE, JH
ZHANG, J
ZHANG, XM
FAWCETT, PN
JOYCE, BA
APPLIED PHYSICS LETTERS, 1993, 62 (07) : 753 - 755
[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS AND ANISOTROPY ON VICINAL ALAS(001) DURING MOLECULAR-BEAM EPITAXY
SHITARA, T
NEAVE, JH
JOYCE, BA
APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1658 - 1660

← 1 2 3 4 5 →