COMPARISON OF NEUTRON, PROTON AND GAMMA-RAY EFFECTS IN SEMICONDUCTOR-DEVICES

被引：53
作者：
RAYMOND, JP [1 ]
PETERSEN, EL [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/TNS.1987.4337526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1622 / 1628
页数：7
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