KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE

被引：4

作者：

KRETZ, T

PRIBAT, D

LEGAGNEUX, P

PLAIS, F

HUET, O

BISARO, R

机构：

[1] Thomson-CSF LCR, Orsay Cedex

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6A期

关键词：

SOLID PHASE CRYSTALLIZATION; DISILANE; POLYSILICON; CHEMICAL VAPOR DEPOSITION; KINETICS OF CRYSTALLIZATION;

D O I：

10.1143/JJAP.34.L660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The kinetics of crystallization of high-purity amorphous and mixed-phase silicon films obtained by pyrolysis of disilane gas in the millitorr pressure range were studied. A combination of in situ electrical conductance measurements and transmission electron microscopy analysis was used to determine the crystallization parameters. For mixed-phase films we report an activation energy for the nucleation rate of the order of 2.9 eV, compared to approximately 3.1 eV for the completely amorphous ones; the activation energy for the growth rate is roughly equal to 2.7 eV for the two types of films analyzed.

引用

页码：L660 / L663

页数：4

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