KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE

被引：4
|
作者：
KRETZ, T
PRIBAT, D
LEGAGNEUX, P
PLAIS, F
HUET, O
BISARO, R
机构：
[1] Thomson-CSF LCR, Orsay Cedex
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6A期
关键词：
SOLID PHASE CRYSTALLIZATION; DISILANE; POLYSILICON; CHEMICAL VAPOR DEPOSITION; KINETICS OF CRYSTALLIZATION;
D O I：
10.1143/JJAP.34.L660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The kinetics of crystallization of high-purity amorphous and mixed-phase silicon films obtained by pyrolysis of disilane gas in the millitorr pressure range were studied. A combination of in situ electrical conductance measurements and transmission electron microscopy analysis was used to determine the crystallization parameters. For mixed-phase films we report an activation energy for the nucleation rate of the order of 2.9 eV, compared to approximately 3.1 eV for the completely amorphous ones; the activation energy for the growth rate is roughly equal to 2.7 eV for the two types of films analyzed.
引用
收藏
页码：L660 / L663
页数：4
相关论文
共 50 条
  • [21] Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia
    Temple-Boyer, P
    Jalabert, L
    Couderc, E
    Scheid, E
    Fadel, P
    Rousset, B
    THIN SOLID FILMS, 2002, 414 (01) : 13 - 17
  • [22] Dielectric properties of very thin low pressure chemically vapor deposited silicon films
    Davazoglou, D
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3819 - 3823
  • [23] N-TYPE POLYCRYSTALLINE SILICON FILMS OBTAINED BY CRYSTALLIZATION OF IN-SITU PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS DEPOSITED AT LOW-PRESSURE
    SARRET, M
    LIBA, A
    LEBIHAN, F
    JOUBERT, P
    FORTIN, B
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5492 - 5497
  • [24] Phosphorus and Boron Doping Effects on Nanocrystalline Formation in Hydrogenated Amorphous and Nanocrystalline Mixed-Phase Silicon Thin Films
    Jiang, C. -S.
    Yan, Y.
    Moutinho, H. R.
    Al-Jassim, M. M.
    Yan, B.
    Sivec, L.
    Yang, J.
    Guha, S.
    AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
  • [25] Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias
    Jun, Seung-Ik
    Rack, Philip D.
    McKnight, Timothy E.
    Melechko, Anatoli V.
    Simpson, Michael L.
    APPLIED PHYSICS LETTERS, 2006, 89 (02)
  • [26] INVESTIGATION OF AMORPHOUS LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON FILMS BY ELLIPSOMETRY
    FLAMME, B
    SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1980, 10 (01): : 48 - 52
  • [27] GAS-PHASE KINETICS IN THE ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SILANE AND DISILANE
    GIUNTA, CJ
    MCCURDY, RJ
    CHAPPLESOKOL, JD
    GORDON, RG
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 1062 - 1075
  • [28] GAS-PHASE REACTION STUDY OF DISILANE PYROLYSIS - APPLICATIONS TO LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
    JOHANNES, JE
    EKERDT, JG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) : 2135 - 2140
  • [29] SEEBECK AND PIEZORESISTANCE EFFECTS IN AMORPHOUS MICROCRYSTALLINE MIXED-PHASE SILICON FILMS AND APPLICATIONS TO POWER SENSORS AND STRAIN-GAUGES
    NISHIDA, S
    KONAGAI, M
    TAKAHASHI, K
    THIN SOLID FILMS, 1984, 112 (01) : 7 - 16
  • [30] Analysis of controlled mixed-phase, amorphous plus microcrystalline. silicon thin films by real time spectroscopic ellipsometry
    Podraza, N. J.
    Li, Jing
    Wronski, C. R.
    Dickey, E. C.
    Collins, R. W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (06): : 1255 - 1259
12345