KINETICS OF CRYSTALLIZATION OF AMORPHOUS AND MIXED-PHASE SILICON FILMS DEPOSITED BY PYROLYSIS OF DISILANE GAS AT VERY-LOW PRESSURE

被引：4
|
作者：
KRETZ, T
PRIBAT, D
LEGAGNEUX, P
PLAIS, F
HUET, O
BISARO, R
机构：
[1] Thomson-CSF LCR, Orsay Cedex
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6A期
关键词：
SOLID PHASE CRYSTALLIZATION; DISILANE; POLYSILICON; CHEMICAL VAPOR DEPOSITION; KINETICS OF CRYSTALLIZATION;
D O I：
10.1143/JJAP.34.L660
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The kinetics of crystallization of high-purity amorphous and mixed-phase silicon films obtained by pyrolysis of disilane gas in the millitorr pressure range were studied. A combination of in situ electrical conductance measurements and transmission electron microscopy analysis was used to determine the crystallization parameters. For mixed-phase films we report an activation energy for the nucleation rate of the order of 2.9 eV, compared to approximately 3.1 eV for the completely amorphous ones; the activation energy for the growth rate is roughly equal to 2.7 eV for the two types of films analyzed.
引用
收藏
页码：L660 / L663
页数：4
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