MEMORY SWITCHING CHARACTERISTICS OF IN2SE3 AMORPHOUS THIN-FILMS

被引：0

作者：

AFIFI, MA ^{[1
]}

LABIB, HH ^{[1
]}

HEGAB, NA ^{[1
]}

FADEL, M ^{[1
]}

BEKHEET, AE ^{[1
]}

机构：

[1] AIN SHAMS UNIV, FAC EDUC, DEPT PHYS, CAIRO, EGYPT

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1995年 / 33卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical studies performed on films on In2Se3 compound exhibits non-linear I-V characteristics and switching phenomenon The threshold voltage increases linearly with increasing film thickness while decreases exponentially with increasing temperature. The rapid transition between the highly resistive and conductive state was attributed to an electrothermal model initiated from Joule heating of a current channel.

引用

页码：129 / 134

页数：6

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