EFFECT OF SI+ IMPLANTATION ON THE PROPERTIES OF AMORPHOUS HYDROGENATED SILICON

被引：0
作者：
GOLIKOVA, OA
MAVLYANOV, KY
PETROV, IN
YAFAEV, RR
机构：
来源：
SEMICONDUCTORS | 1995年 / 29卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：299 / 301
页数：3
相关论文
共 50 条
[31]   The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B) [J].
Khelifati, N. ;
Tata, S. ;
Rahal, A. ;
Cherfi, R. ;
Fedala, A. ;
Kechouane, M. ;
Mohammed-Brahim, T. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4) :679-682
[32]   Hydrogen motion in hydrogenated amorphous silicon (a-Si:H) [J].
Hari, P ;
Taylor, PC ;
Street, RA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 :52-55
[33]   Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon [J].
Agarwal, A ;
Christensen, K ;
Venables, D ;
Maher, DM ;
Rozgonyi, GA .
APPLIED PHYSICS LETTERS, 1996, 69 (25) :3899-3901
[34]   DEFECTS IN SILICON NEAR THE SI-SIO2 INTERFACE PRODUCED BY SI+ IONS IMPLANTATION [J].
GALKIN, GN ;
BOBROVA, EA ;
ABBASOVA, RU ;
VAVILOV, VS .
CRYSTAL LATTICE DEFECTS, 1982, 9 (04) :189-194
[35]   DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS [J].
HARA, T ;
MURAKI, T ;
TAKEDA, S ;
UCHITOMI, N ;
KITAURA, Y ;
GAO, GB .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10B) :L1435-L1437
[36]   Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films [J].
Wen, Guozhi ;
Zeng, Xiangbin ;
Wen, Xixin ;
Liao, Wugang .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (16)
[37]   Hall-effect and sign properties in hydrogenated amorphous and disordered crystalline silicon [J].
Nebel, CE ;
Rother, M ;
Summonte, C ;
Heintze, M ;
Stutzmann, M .
AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :813-818
[38]   THE EFFECT OF HYDROGEN DILUTION ON THE ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON [J].
VARHUE, WJ ;
CHAO, H .
THIN SOLID FILMS, 1989, 169 (02) :179-186
[39]   Effect of deposition temperature on the properties of magnetron sputtered hydrogenated amorphous silicon films [J].
Banerjee, Ratnabali, 1600, (28)
[40]   Damage and recovery in arsenic doped silicon after high energy Si+ implantation [J].
Solmi, S ;
Ferri, M ;
Nobili, D ;
Bianconi, M .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3769-3774
12345