NONEQUILIBRIUM PHENOMENA IN ION-IMPLANTED MOS CAPACITORS

被引：2

作者：

BERGER, J ^{[1
]}

机构：

[1] HEWLETT PACKARD CO, HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：497 / 499

页数：3

共 9 条

[1]

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[4]

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[5]

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[8] SOME PITFALLS IN FAST RAMP C-V MEASUREMENTS [J].

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SOLID-STATE ELECTRONICS, 1973, 16 (12) :1423-1427

[9] BURIED CHANNEL CHARGE COUPLED DEVICE [J].

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