MOSSBAUER STUDY OF THE AMORPHOUS LAYER IN ION-IMPLANTED DIAMOND

被引：9

作者：

VANROSSUM, M

LANGOUCHE, G

DEBRUYN, J

DEPOTTER, M

COUSSEMENT, R

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

Compendex;

D O I：

10.1016/0029-554X(81)90714-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

SEMICONDUCTING DIAMONDS

引用

页码：407 / 411

页数：5

共 12 条

[1] LOCAL ORDER AS DETERMINED BY ELECTRONIC AND VIBRATIONAL SPECTROSCOPY - AMORPHOUS-SEMICONDUCTORS [J].

BRODSKY, MH ;

CARDONA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) :81-108

[2] ANISOTROPY OF DEBYE-WALLER FACTOR IN CESIUM-GRAPHITE INTERCALATION COMPOUNDS BY MOSSBAUER-SPECTROSCOPY, AND QUADRUPOLE-MOMENT OF 81-KEV STATE IN CS-133 [J].

CAMPBELL, LE ;

MONTET, GL ;

PERLOW, GJ .

PHYSICAL REVIEW B, 1977, 15 (07) :3318-3324

[3]

DEZSI I, UNPUBLISHED

[4] MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES [J].

HAFEMEISTER, DW ;

WAARD, HD .

PHYSICAL REVIEW B, 1973, 7 (07) :3014-3027

[5] HIGH-TEMPERATURE ION-IMPLANTATION IN DIAMOND [J].

LEE, YH ;

BROSIOUS, PR ;

CORBETT, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (01) :237-242

[6] STUDY OF DEFECTS INTRODUCED BY ION-IMPLANTATION IN DIAMOND [J].

MORHANGE, JF ;

BESERMAN, R ;

BOURGOIN, JC .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :544-548

[7]

NICOLAENKO VA, 1980, RAD EFFECTS, V45, P185

[8] UBER ALKALIGRAPHITVERBINDUNGEN [J].

RUDORFF, W ;

SCHULZE, E .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1954, 277 (3-4) :156-171

[9]

TALMI A, 1978, DEFECTS RAD EFFECTS, P399

[10] OBSERVATION OF THE AMORPHIZATION PROCESS IN DIAMOND BY MOSSBAUER-SPECTROSCOPY [J].

VANROSSUM, M ;

BRUYN, JD ;

LANGOUCHE, G ;

DEPOTTER, M ;

COUSSEMENT, R .

PHYSICS LETTERS A, 1979, 73 (02) :127-128

← 1 2 →