FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON IN RF OXYGEN PLASMA

被引：13

作者：

ATANASOVA, ED

KIROV, KI

KANTARDJEVA, EI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：73 / 80

页数：8

共 20 条

[1] FORMATION OF THIN OXIDE-FILMS OF SILICON BY GAS PLASMA [J].

ABE, H ;

EMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :925-926

[2] FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1370-&

[3] DESIGN CRITERIA FOR UNIFORM REACTION-RATES IN AN OXYGEN PLASMA [J].

BATTEY, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :140-146

[4] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J].

BENNINGHOVEN, A ;

STORP, S .

APPLIED PHYSICS LETTERS, 1973, 22 (04) :170-171

[5] CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL MOS STRUCTURES [J].

DUBEY, PK ;

FILIKOV, VA ;

SIMMONS, JG .

THIN SOLID FILMS, 1976, 33 (01) :49-63

[6] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J].

FEHLNER, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1723-+

[7] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[8] KINETICS OF OXIDE FILM GROWTH ON METAL CRYSTALS .1. FORMULATION AND NUMERICAL SOLUTIONS [J].

FROMHOLD, AT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) :1081-+

[9] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

GOODMAN, AM ;

BREECE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :982-&

[10]

HAUFFE K, 1963, REAKTSII TVERDIKH TE, V2, P144

← 1 2 →