VOLTAGE-CONTROLLED PHOTOETCHING OF GAAS

被引：25

作者：

HOFFMANN, HJ

WOODALL, JM

CHAPPELL, TI

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 566

页数：3

共 16 条

[1] ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB [J].

ELLIOTT, CR ;

REGNAULT, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1557-1562

[2] DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING [J].

FAKTOR, MM ;

STEVENSON, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :621-629

[3] MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION [J].

GERISCHE.H ;

MINDT, W .

ELECTROCHIMICA ACTA, 1968, 13 (06) :1329-&

[4] UBER DEN MECHANISMUS DER ANODISCHEN AUFLOSUNG VON GALLIUMARSENID [J].

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1965, 69 (07) :578-+

[5] ELECTROLYTIC DECOMPOSITION AND PHOTO-DECOMPOSITION OF COMPOUND SEMICONDUCTORS IN CONTACT WITH ELECTROLYTES [J].

GERISCHER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1422-1428

[6]

KERN W, 1978, RCA REV, V39, P278

[7]

KERN W, 1978, THIN FILM PROCESSES, P401

[8] CORRELATION BETWEEN ETCH CHARACTERISTICS OF GAAS ETCH SOLUTIONS CONTAINING H2O2 AND SURFACE-FILM CHARACTERISTICS [J].

KOHN, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :505-508

[9] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

KUHNKUHNENFELD, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1063-+

[10]

LOGAN RA, 1978, J ELECTROCHEM SOC, V120, P1385

← 1 2 →