INVESTIGATION OF FAST SURFACE STATES OF GERMANIUM

被引:0
作者
LITOVCHENKO, VG
LYASHENKO, VI
机构
来源
SOVIET PHYSICS-SOLID STATE | 1960年 / 1卷 / 10期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1470 / 1480
页数:11
相关论文
共 18 条
[11]  
RZHANOV AV, 1957, J TECH PHYS USSR, V27, P2440
[12]  
RZHEVUSKII G, 1955, B POLSK AKAD NAUK, V3, P2
[13]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
SCHRIEFFER, JR .
PHYSICAL REVIEW, 1955, 97 (03) :641-646
[14]  
SCHRIEFFER JR, 1956, SEMICONDUCTOR SURFAC, P55
[15]   SURFACE STATES ON SILICON AND GERMANIUM SURFACES [J].
STATZ, H ;
DEMARS, GA ;
DAVIS, L ;
ADAMS, A .
PHYSICAL REVIEW, 1956, 101 (04) :1272-1281
[16]   RECOMBINATION CENTERS AND FAST STATES ON UNSTABLE GERMANIUM SURFACES [J].
WANG, S ;
WALLIS, G .
PHYSICAL REVIEW, 1957, 107 (04) :947-953
[17]   FIELD EFFECT ON AN ILLUMINATED GE SURFACE AND INVESTIGATION OF THE SURFACE RECOMBINATION PROCESS [J].
WANG, S ;
WALLIS, G .
PHYSICAL REVIEW, 1957, 105 (05) :1459-1464
[18]  
YUNOVICH AE, 1957, J TECH PHYS, P27