HYDROGEN-INDUCED VARIATIONS OF THE IONIZATION-ENERGY ON GAAS(110) SURFACES

被引：9

作者：

KAMPEN, TU

MONCH, W

机构：

[1] Laboratorium für Festkörperphysik und Sonderforschungsbereich 254, Universität Duisburg, D-4100 Duisburg

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.46.13309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemisorption of hydrogen atoms on GaAs(I 10) surfaces at 140 K was found to decrease their ionization energy. The experimental results are explained by the formation of Ga-H and As-H surface dipoles and a simultaneous removal of the clean-surface tilt and buildup of a counter-rotation of the Ga-As chains. The adatom-induced surface dipoles are oriented such as to increase the ionization energy. Due to the ionicity of GaAs, the untilting and countertilting of the Ga-As chains reduces the ionization energy. The latter two contributions overcompensate the effect of the Ga-H and As-H dipoles.

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页码：13309 / 13312

页数：4

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