DETERMINATION OF G-FACTOR OF ELECTRONS IN N-TYPE SILICON SURFACE INVERSION LAYERS

被引：25
作者：
KOBAYASHI, M
KOMATSUBARA, KF
机构：
[1] NATL LAB HIGH ENERGY PHYS, TSUKUBA, IBARAKI, JAPAN
[2] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN
来源：
SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 03期
关键词：
D O I：
10.1016/0038-1098(73)90594-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：293 / 296
页数：4
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