FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS

被引：30

作者：

EIZENBERG, M ^{[1
]}

FOELL, H ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：861 / 868

页数：8

共 20 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].

ANDREWS, JM ;

LEPSELTER, MP .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+

[2] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].

CANALI, C ;

CATELLANI, C ;

PRUDENZIATI, M ;

WADLIN, WH ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45

[3] SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS [J].

EIZENBERG, M ;

FOLL, H ;

TU, KN .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :547-549

[4] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS [J].

EIZENBERG, M ;

OTTAVIANI, G ;

TU, KN .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :87-89

[5]

EIZENBERG M, UNPUBLISHED

[6]

FOELL H, UNPUBLISHED

[7] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].

KIRCHER, CJ .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :507-+

[8] SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON [J].

KRITZINGER, S ;

TU, KN .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :205-208

[9] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J].

MAYER, JW ;

LAU, SS ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5855-5859

[10] PARALLEL SILICIDE CONTACTS [J].

OHDOMARI, I ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3735-3739

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