NEUTRON INDUCED REACTIONS IN SILICON SEMICONDUCTOR DETECTORS

被引：24

作者：

MINGAY, DW

SELLSCHOP, JP

JOHNSON, PM

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1971年 / 94卷 / 03期

关键词：

D O I：

10.1016/0029-554X(71)90012-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：497 / +

页数：1

共 17 条

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[7] FLUCTUATION DE LA SECTION EFFICACE DE REACTION (N,ALPHA) SUR LE SILICIUM NATUREL ENTRE 13,6 ET 15 MEV [J].

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[8]

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