NOISE IN PHOSPHORUS-IMPLANTED BURIED CHANNEL MOS-TRANSISTORS

被引：1

作者：

LIU, ST

TUFTE, ON

VANDERZIEL, A

PAI, SY

LARSON, W

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

[2] HONEYWELL SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 12期

关键词：

D O I：

10.1016/0038-1101(80)90112-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1195 / 1196

页数：2

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