METHOD OF DETECTING FINE-STRUCTURE IN SECONDARY-ELECTRON EMISSION YIELD AND APPLICATION TO SI(111)

被引：26
作者：
GOTO, K
ISHIKAWA, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期
关键词：
D O I：
10.1063/1.1661361
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1559 / +
页数：1
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