STUDY OF RESIDUAL DAMAGE IN SI(001) DUE TO LOW-ENERGY (110 EV) AR+ AND CL+ BOMBARDMENT USING MEDIUM ENERGY ION-SCATTERING

The effects of the initial surface conditions, the bombardment temperature and the post-bombardment annealing temperature on the residual damage in Si(001) due to 110 eV Cl+ and Ar+ irradiation were studied. It was found that the damage produced in HF-etched samples with contaminated surfaces (carbon and oxygen impurities) was greater and more stable than that for either atomically clean or native oxide covered surfaces. The damage following high-temperature bombardment (1073 K) was closer to the surface and more stable than that for RT bombardment. It is shown that a significant amount of the damage created in silicon by 110 eV Cl+ and Ar+ bombardment at RT remains after annealing to temperatures as high as 1073 K.